DDR3
ECC Unbuffered Memory
DDR3 ECC UDIMM
Features
- ECC DIMM incorporates error correction and detection capabilities
- Fully tested and optimized for stability and performance
- Uses original IC to meet strict industrial standards
- JEDEC standard 1.5V (1.425V ~ 1.575V) & 1.35V (1.28V ~ 1.45V)
- Operating Environment: 0°C ~ 85°C
- 30μ” Gold Finger
- RoHS Compliance
- CE / FCC Certification
DDR3 ECC UDIMM is an industrial memory module that provides lasting performance and is designed for the server and networking markets. The modules come equipped with 30μ” Gold Fingers and include single bit error correction. 2GB, 4GB, and 8GB capacities are available, as well as data transfer rates of 1066MT/s, 1333MT/s, 1600MT/s, and 1866MT/s.
ECC function is designed to detect and correct single-bit errors that occur during data storage and transmission. ECC modules use Hamming Code or Triple Modular Redundancy for error detection and correction, and manage error corrections on their own, without requesting that the data source resend the original data.
PROVEN RELIABILITY THROUGH 3rd PARTY TESTING
Ensuring the durability and reliability of components is essential for meeting the demands of challenging environments. Our solutions undergo rigorous third-party testing, adhering to stringent industry standards. These tests validate the robustness of our products under extreme conditions, ensuring dependable performance across various applications.
| Package Drop Test | Drop Height 76 cm, ISTA-1A |
| Thermal Shock | -40°C ~ 110°C, 500 Cycles |
| DRAM Module Insert & Extract Test | 100 Cycles, EIA-364-9 |
TAILORED TO YOUR SPECIFIC NEEDS
SIDE FILL
Side Fill reinforces the connection between chips and the board, providing superior protection in environments with high vibration or mechanical stress.
CONFORMAL COATING
Conformal Coating applies a protective acrylic layer over the DRAM PCB, shielding it from harmful elements such as moisture, dust, and corrosive substances.
IMPLEMENTED WITH SUCCESS IN DYNAMIC ENVIRONMENTS
EDGE SERVER
Designed for edge computing, our products ensure stable performance in harsh conditions, supporting real-time data processing at the edge device.
DATA CENTER
Driving the backbone of modern computing, our solutions deliver high performance and reliability for data-intensive operations.
COMMUNICATION
Our solutions ensure reliable and uninterrupted performance, supporting networking and critical telecom infrastructure even under heavy loads.
SPECIFICATIONS
| Model Name | DDR3 ECC UDIMM |
|---|---|
| DDR Generation | DDR3 Memory |
| DIMM Type | ECC UDIMM |
| Speed | 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s |
| Density | 2GB, 4GB, 8GB |
| Function | ECC Unbuffered Memory |
| Pin Number | 240pin |
| Bus Width | x72 |
| Voltage | 1.35V, 1.5V |
| PCB Height | 1.18 Inches |
| Operating Temperature | 0°C ~ 85°C |
| 30μ” Gold Finger | Y |
ORDER INFORMATION
P/N | IC Config. | Rank | Temp. | Description |
M3C0-2GMJ1CQE | 256M x 8 | 1R x 8 | 0°C ~ 85°C | DDR3 1866 2GB ECC UDIMM |
M3C0-4GMJ3CQE | 256M x 8 | 2R x 8 | 0°C ~ 85°C | DDR3 1866 2GB ECC UDIMM |
M3C0-4GMS1CQE | 512M x 8 | 1R x 8 | 0°C ~ 85°C | DDR3 1866 4GB ECC UDIMM |
M3C0-8GMS3CQE | 512M x 8 | 2R x 8 | 0°C ~ 85°C | DDR3 1866 4GB ECC UDIMM |
M3C0-2GMJ1LQE | 256M x 8 | 1R x 8 | 0°C ~ 85°C | DDR3L 1866 4GB ECC UDIMM |
M3C0-4GMJ3LQE | 256M x 8 | 2R x 8 | 0°C ~ 85°C | DDR3L 1866 4GB ECC UDIMM |
M3C0-4GMS1LQE | 512M x 8 | 1R x 8 | 0°C ~ 85°C | DDR3L 1866 8GB ECC UDIMM |
M3C0-8GMS3LQE | 512M x 8 | 2R x 8 | 0°C ~ 85°C | DDR3L 1866 8GB ECC UDIMM |
*Please contact Innodisk for products with other speeds.
